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| FLM0910-15F X-Band Internally Matched FET FEATURES *E Output Power: P1dB=42.0dBm(Typ.) High *E Gain: G1dB=7.5dB(Typ.) High *E PAE: add=32%(Typ.) High *E Broad Band: 9.5~10.5GHz *E Impedance Matched Zin/Zout = 50 Hermetically Sealed Package DESCRIPTION The FLM0910-15F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25 o C) Ite m Drain-Source Voltage Gate-Source Voltage Total Pow e r Dissipation Storage Temperature Channe l Te m perature Symbol VDS VGS PT Tstg Tch Rating 15 -5 57.7 -65 to +175 175 Unit V V W oC oC RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25 o C) Ite m DC Input Voltage Forw ard Gate Current Reverse Gate Current Symbol VDS IGF IGR Condition RG=50 ohm RG=50 ohm Lim it 10 *... 16.7 *... * -3.62 Unit V mA mA ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 o C) Ite m Drain Current Trans conductance Pinch-off Voltage Gate-Source Breakdown Voltage Output Pow e r at 1dB G.C.P. Pow e r Gain at 1dB G.C.P. Drain Current Pow e r -added Efficiency Gain Flatne s s Therm al Re s istance Channe l Te m perature Rise CASE STYLE : IB ESD Clas s III 2000V *@ ~ Symbol IDSS gm Vp VGSO P1dB G1dB Idsr Nadd G Rth Tch Condition VDS=5V , VGS=0V VDS=5V , IDS=3.5A VDS=5V , IDS=300mA IGS=-300uA VDS=10V IDS=0.5IDSS (typ.) f= 9.5 ~ 10.5 GHz Zs=ZL=50 ohm Channel to Case 10V x Idsr X Rth M in. -0.5 -5.0 41.0 6.5 Lim it Typ. 7.2 4500 -1.5 42.0 7.5 4.0 32 2.3 M ax. 10.8 -3.0 5.0 1.2 2.6 100 Unit A mS V V dBm dB A % dB o C/W oC G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Lev el Edition 1.1 May 2005 1 FLM0910-15F X-Band Internally Matched FET OUTPUT POWER v.s. FREQUENCY OUTPUT POWER , POWER ADDED EFFICIENCY v.s. INPUT POWER Vds=10V, Ids=0.5Idss 44 Output Power Level [dBm] 70 60 50 Efficiency [%] Pout PAE 40 30 20 10 Vds=10V, Ids=0.5Idss 44 42 Output Power [dBm] 42 40 38 36 34 32 30 22 24 26 28 30 32 34 36 40 38 36 34 32 9.3 9.5 9.7 9.9 10.1 10.3 10.5 10.7 38 0 Frequency [GHz] Input Power Level [dBm] Pin=34dBm Pin=26dBm Pin=36dBm Pin=30dBm P1dB DRAIN CURRENT v.s. INPUT POWER Vds=10V, Ids=3.6A 4000 3900 Drain Current [mA] Freq=10.0GHz 3800 3700 3600 3500 3400 3300 22 24 26 28 30 32 34 36 38 Input Power Level [dBm] 2 FLM0910-15F X-Band Internally Matched FET * S-PARAMETERS +50j +25j 9.5GHz +90 +100j 10.5 10 25 +10j 9.5GHz 10 +250j 10.5 0 10 * 10.5 10.5 180 4 10 10 2 Scale for |S21| 9.5GHz 0 Scale for |S 12| -10j -250j 0.2 9.5GHz -25j -50j -100j S11 S22 0.4 -90 S12 S21 VDS=10.0V , IDS=0.5IDSS Freq. [GHz] 9.3 9.4 9.5 9.6 9.7 9.8 9.9 10.0 10.1 10.2 10.3 10.4 10.5 10.6 10.7 mag 0.589 0.544 0.520 0.498 0.488 0.477 0.474 0.471 0.467 0.462 0.463 0.468 0.469 0.478 0.488 S11 ang 147.4 130.9 114.6 98.6 83.8 68.8 54.6 39.4 25.4 10.4 -4.6 -21.7 -39.2 -58.6 -77.5 mag 2.678 2.649 2.618 2.569 2.538 2.524 2.509 2.524 2.514 2.519 2.553 2.563 2.591 2.554 2.514 S21 ang -98.7 -111.1 -122.5 -134.0 -144.9 -155.2 -165.9 -176.9 172.4 161.2 150.2 137.9 125.3 112.4 98.8 mag 0.041 0.043 0.046 0.049 0.054 0.059 0.061 0.066 0.069 0.073 0.077 0.083 0.085 0.088 0.090 S12 ang -88.1 -107.6 -127.3 -141.0 -155.7 -169.5 177.5 163.5 149.1 136.4 121.6 109.8 95.4 84.0 69.4 mag 0.374 0.387 0.397 0.401 0.396 0.390 0.380 0.368 0.349 0.321 0.290 0.250 0.215 0.174 0.126 S22 ang 77.2 67.0 57.8 49.7 41.6 33.1 24.6 15.6 7.1 -1.2 -10.1 -20.5 -30.7 -40.2 -48.5 3 FLM0910-15F X-Band Internally Matched FET * Package Out Line Case Style : IB Unit : mm PIN ASSIGNMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE 4 FLM0910-15F X-Band Internally Matched FET For further information please contact : Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ Phone: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 CAUTION Eudyna Devices Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: *E not put these products into the mouth. Do *E not alter the form of this product into a gas, powder, or liquid Do through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. *E Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1906B, 19/F, Tower 6, China Hong Kong City, 33 Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: *i 852*j 2377-0227 Fax: *i 852*j 2377-3921 Eudyna Devices International s.r.l Via Teglio 8/2-20158 Milano Italy TEL:+39-02-8738-1695 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho, Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) Tel +81-55-275-4411 Fax +81-55-275-9461 Sales Division 1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan Tel +81-45-853-8156 Fax +81-45-853-8170 5 |
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